Próximamente
Semiconductor Physics & Devices
Entiende un transistor lo bastante bien como para diseñar el siguiente.
El curso completo
- módulos
- 65
- temas
- 697
- min por lección
- 15
58%
de los nuevos empleos en chips de EE. UU. para 2030 corren el riesgo de quedar sin cubrir al ritmo actual de titulados.
Lo que sabrás hacer.
Dibuja e interpreta diagramas de bandas de energía
Etapa 1 · Physics Foundations
Modela arrastre, difusión y recombinación
Etapa 2 · Carrier Transport
Analiza uniones PN, Schottky y heterouniones
Etapa 3 · Junctions & Interfaces
Explica los MOSFET, del canal largo al FinFET
Etapa 4 · Transistors
Compara dispositivos de potencia de silicio, SiC y GaN
Etapa 5 · Power, Memory & Emerging Devices
Extrae parámetros y calibra modelos TCAD
Etapa 6 · Characterization & Modeling
Siete etapas.Una sola subida constante.
Empieza con un cristal. Termina con un transistor que puedes modelar, medir y explicar.
65módulos
en 7 etapas
697temas
≈ 11 por módulo
≈174horas
en lecciones de 15 minutos
≈23meses
≈11meses
≈6meses
para terminar el curso completo
- 1
Physics Foundations
Cristales, bandas y portadores
9 módulos · 94 temas · ≈ 24 h
- 2
Carrier Transport
Cómo se mueve realmente la carga
8 módulos · 86 temas · ≈ 22 h
- 3
Junctions & Interfaces
Donde se encuentran los materiales
9 módulos · 95 temas · ≈ 24 h
- 4
Transistors
El interruptor detrás de cada chip
17 módulos · 179 temas · ≈ 45 h
- 5
Power, Memory & Emerging Devices
Potencia, memoria y lo que viene
12 módulos · 130 temas · ≈ 33 h
- 6
Characterization & Modeling
Medir y modelar dispositivos reales
7 módulos · 80 temas · ≈ 20 h
- 7
Laboratories & Device Study
Donde los modelos se encuentran con el laboratorio
3 módulos · 33 temas · ≈ 8 h
Meses
04812160246801234
MesesMeta · ≈ 23 meses · ≈ 11 meses · ≈ 6 meses
Las horas y los meses son estimaciones: una lección de 15 minutos por tema, cada día.
Cada módulo.Cada tema.
Los títulos de módulos y temas se quedan en inglés, el idioma de trabajo del sector.
Etapa 1
Physics Foundations
Cristales, bandas y portadores
9 módulos · 94 temas
1Foundations of Semiconductor Physics and Devices10 temas
- Semiconductors as Controllable Electronic Materials
- Conductors, Semiconductors, and Insulators
- Material Properties and Device Behavior
- Charge, Potential, Current, and Stored Energy
- Electrons and Holes as Charge Carriers
- Equilibrium and Nonequilibrium Device Operation
- Junctions, Contacts, Gates, and Active Regions
- Physical Structures and Terminal Characteristics
- Connecting Microscopic Mechanisms to Measurable Quantities
- Levels of Description in Semiconductor Device Models
2Physical Quantities and Electrostatic Foundations10 temas
- Units and Scales in Semiconductor Physics
- Electric Charge, Charge Density, and Current Density
- Electric Fields and Electrostatic Potential
- Electron Energy and the Sign of Electrostatic Potential
- Permittivity, Polarization, and Electric Displacement
- Gauss's Law and Poisson's Equation
- Boundary Conditions at Material Interfaces
- Capacitance and Differential Charge Response
- Thermal Energy and Characteristic Energy Scales
- Dimensional Analysis and Order-of-Magnitude Estimates
3Quantum Mechanics for Semiconductor Devices10 temas
- Wavefunctions and Probability Density
- The Schrödinger Equation and Energy Eigenstates
- Free Electrons and Plane-Wave States
- Momentum, Wavevector, and Wavelength
- Potential Steps and Barrier Transmission
- Tunneling Through Finite Barriers
- Bound States and Quantum Confinement
- The Pauli Exclusion Principle
- Spin Degeneracy and Electronic State Counting
- Effective Models and Their Physical Assumptions
4Crystal Structure and Reciprocal Space10 temas
- Atomic Bonding in Semiconductor Solids
- Crystal Lattices, Basis Atoms, and Unit Cells
- Diamond, Zinc-Blende, and Wurtzite Structures
- Crystal Directions and Miller Indices
- Crystallographic Planes and Surface Orientation
- Reciprocal Lattices and Brillouin Zones
- Periodicity and Electron Wave Propagation
- Lattice Vibrations and Phonons
- Lattice Mismatch and Crystal Symmetry
- Relating Crystal Structure to Electronic Anisotropy
5Electronic Band Structure12 temas
- From Atomic Levels to Energy Bands
- Bloch States in Periodic Potentials
- Valence Bands, Conduction Bands, and Bandgaps
- Direct and Indirect Bandgaps
- Energy-Wavevector Relations
- Group Velocity and Band Curvature
- Effective Mass and Effective-Mass Tensors
- Conduction-Band Valleys and Valley Degeneracy
- Heavy-Hole, Light-Hole, and Split-Off Bands
- Band Nonparabolicity
- Temperature and Composition Dependence of Band Structure
- Reading and Comparing Semiconductor Band Diagrams
6Density of States and Electronic State Counting10 temas
- Counting Allowed States in Wavevector Space
- Three-Dimensional Density of States
- Conduction-Band and Valence-Band State Densities
- Density-of-States Mass and Transport Mass
- Effective Density of States
- Two-Dimensional Subbands and Step-Like State Densities
- One-Dimensional Subbands and Density-of-States Singularities
- Discrete States in Zero-Dimensional Systems
- Valley and Spin Contributions to State Counting
- Connecting Density of States to Carrier Population
7Carrier Statistics at Thermal Equilibrium10 temas
- The Fermi-Dirac Distribution
- Fermi Level and Chemical Potential
- Electron and Hole Concentration Integrals
- The Nondegenerate Boltzmann Approximation
- Intrinsic Carrier Concentration
- The Intrinsic Fermi Level
- Equilibrium Mass Action and Its Assumptions
- Degenerate Semiconductors and Fermi-Dirac Integrals
- Temperature Dependence of Equilibrium Carrier Densities
- Relating Bandgap and Statistics to Electrical Behavior
8Doping, Ionization, and Charge Neutrality11 temas
- Donors, Acceptors, and Impurity Energy Levels
- Ionized and Neutral Dopants
- Donor and Acceptor Occupation Statistics
- Charge-Neutrality Equations
- Majority and Minority Carriers
- Compensated Semiconductors
- Freeze-Out, Extrinsic, and Intrinsic Temperature Regimes
- Incomplete Ionization
- Degenerate Doping and Bandgap Narrowing
- Electrically Active Dopants and Chemical Dopant Concentration
- Solving Carrier Concentrations Across Doping Regimes
9Energy-Band Diagrams and Electrochemical Potentials11 temas
- Choosing Energy References Consistently
- Vacuum Level, Electron Affinity, and Work Function
- Band Bending and Electrostatic Potential
- Fermi-Level Alignment at Equilibrium
- Built-In Fields in Nonuniform Materials
- Band Diagrams Under Applied Voltage
- Electron and Hole Quasi-Fermi Levels
- Quasi-Fermi-Level Splitting and Nonequilibrium Populations
- Relating Quasi-Fermi Gradients to Current Flow
- Distinguishing Contact Voltage from Internal Potential Variation
- Checking Band Diagrams Against Charge and Field Profiles
Etapa 2
Carrier Transport
Cómo se mueve realmente la carga
8 módulos · 86 temas
10Drift Transport, Mobility, and Scattering11 temas
- Thermal Motion and Field-Induced Drift
- Drift Velocity and Low-Field Mobility
- Conductivity and Resistivity
- Momentum Relaxation and Scattering Time
- Phonon Scattering
- Ionized-Impurity and Neutral-Impurity Scattering
- Mobility Dependence on Temperature and Doping
- Anisotropic Mobility and Multiple Carrier Valleys
- Matthiessen's Rule and Its Limitations
- Electron and Hole Contributions to Conductivity
- Mobility Models and Their Ranges of Validity
11Diffusion and Electrochemical Transport10 temas
- Diffusion Driven by Carrier-Concentration Gradients
- Electron and Hole Diffusion Currents
- The Einstein Relation for Nondegenerate Carriers
- Generalized Diffusion-Mobility Relations
- Drift-Diffusion Balance at Equilibrium
- Built-In Fields in Graded Doping Profiles
- Diffusion Length and Diffusion Time
- Ambipolar Transport of Excess Carriers
- Diffusion with Spatially Varying Material Properties
- Current Direction, Carrier Motion, and Sign Conventions
12Defects, Strain, and Material Quality10 temas
- Vacancies, Interstitials, and Substitutional Defects
- Defect Charge States and Electronic Levels
- Dislocations, Stacking Faults, and Grain Boundaries
- Impurity Complexes and Compensation Centers
- Strain and Changes in Band Energies
- Strain-Induced Band Splitting and Carrier Mobility
- Piezoelectric and Spontaneous Polarization
- Localized States and Defect-Assisted Conduction
- Material Inhomogeneity and Electrical Nonuniformity
- Connecting Defect Populations to Device Limitations
13Carrier Generation and Recombination11 temas
- Thermal Generation and Detailed Balance
- Band-to-Band Recombination
- Radiative and Nonradiative Recombination
- Optical Carrier Generation and Absorption Depth
- Shockley-Read-Hall Recombination Through Defects
- Capture Cross Sections and Trap Occupation
- Auger Recombination
- Low-Injection and High-Injection Lifetimes
- Surface Recombination Velocity
- Spatial Dependence of Generation and Recombination
- Effective Lifetime and Competing Recombination Mechanisms
14Nonequilibrium Carrier Dynamics11 temas
- Excess Electron and Hole Populations
- Low-Level and High-Level Injection
- Carrier Continuity Equations
- Steady-State and Transient Carrier Profiles
- Minority-Carrier Diffusion Equations
- Boundary Conditions at Contacts and Surfaces
- Carrier Decay After Excitation
- Drift, Diffusion, and Recombination Time Scales
- Ambipolar Diffusion Under High Injection
- Quasi-Neutrality and Dielectric Relaxation
- Interpreting Spatially and Temporally Resolved Carrier Behavior
15Coupled Semiconductor Device Equations11 temas
- Poisson's Equation Coupled to Carrier Statistics
- Electron and Hole Current Equations
- Continuity Equations with Generation and Recombination
- Charge Conservation and Terminal Current
- Displacement Current in Time-Dependent Operation
- Electrostatic and Carrier Boundary Conditions
- Quasi-Neutral and Space-Charge Regions
- Steady-State, Transient, and Small-Signal Formulations
- Quasi-Static Approximations
- Scaling Variables and Characteristic Device Lengths
- Identifying When Drift-Diffusion Models Become Inadequate
16High-Field and Nonequilibrium Transport11 temas
- Field-Dependent Mobility and Velocity Saturation
- Carrier Heating and Energy Relaxation
- Momentum and Energy Relaxation Lengths
- The Boltzmann Transport Equation
- Relaxation-Time Approximations
- Intervalley Transfer and Negative Differential Mobility
- Velocity Overshoot in Short Structures
- Impact Ionization and Carrier Multiplication
- Energy-Transport and Hydrodynamic Models
- Ensemble Monte Carlo Transport Concepts
- Distinguishing Local and Nonlocal Transport Effects
17Ballistic and Quantum Transport11 temas
- Mean Free Path and Transport Regimes
- Ballistic and Quasi-Ballistic Conduction
- Contacts as Carrier Reservoirs
- Transmission Probabilities and Conducting Modes
- The Landauer Description of Current
- Quantum Conductance and Contact Contributions
- Injection Velocity and Backscattering
- Coherent and Incoherent Transport
- Tunneling Currents in Nanoscale Structures
- Nonequilibrium Green's Function Concepts
- Comparing Quantum Transport with Drift-Diffusion Predictions
Etapa 3
Junctions & Interfaces
Donde se encuentran los materiales
9 módulos · 95 temas
18PN Junction Electrostatics11 temas
- Formation of a PN Junction
- Space Charge and the Depletion Approximation
- Built-In Potential and Equilibrium Band Bending
- Abrupt and Linearly Graded Junctions
- One-Sided Junction Approximations
- Electric-Field and Potential Profiles
- Depletion Width Under Applied Bias
- Charge Neutrality Across the Junction
- Junction Capacitance from Depletion Charge
- Temperature and Doping Effects on Junction Electrostatics
- Limits of the Depletion Approximation
19PN Junction Current-Voltage Characteristics11 temas
- Carrier Injection Under Forward Bias
- Minority-Carrier Boundary Conditions
- Diffusion Currents in Neutral Regions
- Deriving the Ideal Diode Equation
- Saturation Current and Material Parameters
- Short-Base and Long-Base Diodes
- Reverse-Bias Current Mechanisms
- Temperature Dependence of Junction Current
- Junction Current Under Illumination
- Extracting Physical Meaning from Semilogarithmic I-V Curves
- Identifying the Assumptions Behind Ideal Junction Models
20PN Junction Charge Storage and Dynamics10 temas
- Excess Minority-Carrier Storage
- Charge-Control Descriptions of Diodes
- Diffusion Capacitance
- Depletion and Diffusion Contributions to Admittance
- Small-Signal Conductance and Frequency Response
- Forward Turn-On Transients
- Reverse Recovery and Stored-Charge Removal
- Lifetime, Transit Time, and Switching Behavior
- Bias and Temperature Dependence of Junction Dynamics
- Connecting Transient Measurements to Carrier Transport
21Nonideal Junction Behavior and Breakdown11 temas
- Recombination Current in the Depletion Region
- High-Level Injection and Ideality-Factor Changes
- Series Resistance and Current Crowding
- Surface and Perimeter Leakage
- Trap-Assisted Tunneling
- Band-to-Band Tunneling Breakdown
- Avalanche Breakdown and Ionization Coefficients
- Breakdown Voltage and Doping Dependence
- Junction Curvature and Field Crowding
- Punch-Through and Reach-Through
- Distinguishing Breakdown Mechanisms from Measured Behavior
22Metal-Semiconductor Junctions and Schottky Barriers11 temas
- Metal and Semiconductor Work Functions
- Ideal Schottky-Mott Band Alignment
- Depletion and Accumulation at Metal Contacts
- Schottky Barrier Height and Built-In Potential
- Fermi-Level Pinning and Interface States
- Thermionic Emission Across a Barrier
- Thermionic-Field Emission and Field Emission
- Image-Force Barrier Lowering
- Schottky Junction Capacitance
- Barrier Inhomogeneity and Nonideal I-V Characteristics
- Temperature-Dependent Barrier Extraction
23Ohmic Contacts and Contact Resistance10 temas
- Rectifying and Nonrectifying Contact Behavior
- Tunneling Through Thin Contact Barriers
- Specific Contact Resistivity
- Contact Resistance and Access Resistance
- Current Crowding and Transfer Length
- Contact Geometry and Effective Injection Area
- Transmission-Line and Kelvin Measurement Concepts
- Temperature Dependence of Contact Transport
- Contacts to Low-Dimensional and Heavily Doped Materials
- Separating Contact Limitations from Channel Limitations
24Heterojunctions and Band Alignment11 temas
- Homojunctions and Heterojunctions
- Conduction-Band and Valence-Band Offsets
- Type-I, Type-II, and Broken-Gap Alignments
- Electron-Affinity Models and Their Limitations
- Interface Dipoles and Chemical Bonding Effects
- Charge Transfer and Fermi-Level Alignment
- Carrier Confinement at Material Interfaces
- Strain and Polarization in Heterostructures
- Thermionic and Tunneling Transport Across Heterojunctions
- Recombination and Defect Effects at Heterointerfaces
- Constructing Self-Consistent Heterojunction Band Diagrams
25Quantum Wells and Confined Carrier Systems10 temas
- Finite Quantum Wells and Bound-State Energies
- Subband Formation and Occupation
- Two-Dimensional Electron and Hole Gases
- Triangular Wells at Semiconductor Interfaces
- Self-Consistent Schrödinger-Poisson Solutions
- Wavefunction Penetration and Charge Centroids
- Quantum Capacitance and Finite Density of States
- Quantum Wires and Nanowire Subbands
- Quantum Dots and Discrete Charging States
- Confinement Effects on Transport and Electrostatics
26Semiconductor Surfaces and Interface States10 temas
- Surface Termination and Dangling Bonds
- Surface States and Interface-State Distributions
- Surface Charge and Band Bending
- Occupancy of Donor-Like and Acceptor-Like States
- Surface Fermi-Level Pinning
- Interface-Trap Capture and Emission
- Surface Accumulation, Depletion, and Inversion
- Surface Recombination and Carrier Lifetime
- Passivation as an Electronic Boundary Condition
- Distinguishing Fixed Charge from Responsive Trap Charge
Etapa 4
Transistors
El interruptor detrás de cada chip
17 módulos · 179 temas
27Ideal MOS Capacitor Electrostatics11 temas
- The Metal-Insulator-Semiconductor Structure
- Work-Function Difference and Flat-Band Voltage
- Voltage Division Across Oxide and Semiconductor
- Accumulation, Depletion, and Inversion Regimes
- Surface Potential and Semiconductor Charge
- Solving the MOS Poisson-Boltzmann Problem
- Maximum Depletion Width
- Strong-Inversion Criteria and Threshold Voltage
- Oxide Thickness and Gate Capacitance
- Substrate Doping and Electrostatic Response
- Interpreting MOS Energy-Band Diagrams Under Bias
28MOS Capacitance and Dynamic Response10 temas
- Differential MOS Capacitance
- Quasi-Static and High-Frequency C-V Characteristics
- Minority-Carrier Response and Measurement Frequency
- Deep Depletion and Recovery Toward Equilibrium
- Generation Lifetime and Inversion-Layer Formation
- Conductance and Dissipative Response
- Temperature Dependence of MOS Measurements
- Three-Terminal MOS Structures and Carrier Supply
- Extracting Oxide Capacitance and Doping Information
- Recognizing Measurement Conditions That Alter C-V Interpretation
29Nonideal MOS Interfaces and Gate Dielectrics11 temas
- Fixed Oxide Charge and Flat-Band Shifts
- Interface Traps and C-V Stretch-Out
- Border Traps and Time-Dependent Charge Exchange
- Mobile Charge and Hysteresis
- Dielectric Constant and Equivalent Oxide Thickness
- Band Offsets and Carrier Injection Barriers
- Direct Tunneling and Fowler-Nordheim Tunneling
- Trap-Assisted Gate Leakage
- High-k Interfaces and Mobility Degradation
- Quantum and Charge-Centroid Corrections to Gate Capacitance
- Relating Dielectric Properties to Electrostatic Control
30Long-Channel MOSFET Operation11 temas
- Source, Drain, Gate, and Body Functions
- Channel Formation and Inversion Charge
- The Gradual-Channel Approximation
- Charge-Sheet Models of the Inversion Layer
- Deriving the Linear-Region Drain Current
- Channel Pinch-Off and Current Saturation
- Electron and Hole MOSFET Conventions
- Gate Overdrive and Channel Conductance
- Drain-Current Dependence on Geometry and Material Parameters
- Channel-Length Modulation in Long-Channel Models
- Assumptions Behind the Square-Law MOSFET Model
31MOSFET Subthreshold Operation and Body Effects10 temas
- Diffusion-Dominated Current in Weak Inversion
- Subthreshold Current and Surface Potential
- Subthreshold Swing and Electrostatic Coupling
- The Thermal Swing Limit and Its Assumptions
- Moderate Inversion and Regime Transitions
- Body Bias and Threshold-Voltage Variation
- Depletion Charge and the Body-Effect Coefficient
- Transconductance Efficiency Across Inversion Regimes
- Temperature Dependence of Off-State Current
- Separating Threshold Shifts from Mobility Changes
32Inversion-Layer Transport and Current Limitations11 temas
- Effective Mobility in a Confined Channel
- Vertical-Field Dependence of Carrier Transport
- Coulomb and Surface-Roughness Scattering
- Phonon Scattering in Inversion Layers
- Velocity Saturation Along the Channel
- Source Injection and the Top-of-the-Barrier Picture
- Backscattering in Quasi-Ballistic MOSFETs
- Contact and Access Resistance in Measured Drain Current
- Strain, Crystal Orientation, and Channel Material
- Distinguishing Electrostatic and Transport Improvements
- Comparing Drift-Diffusion and Ballistic Current Limits
33MOSFET Charge, Capacitance, and Frequency Response11 temas
- Terminal Charges and Charge Conservation
- Gate, Channel, Body, and Junction Charge Contributions
- Charge Partition Between Source and Drain
- Intrinsic Capacitance Matrices
- Overlap and Fringing Capacitances
- Small-Signal Transconductance and Output Conductance
- Body Transconductance
- Quasi-Static and Non-Quasi-Static Response
- Carrier Transit Time and Charge Relaxation
- Intrinsic Current-Gain Cutoff Frequency
- Separating Intrinsic Device Response from External Parasitics
34Short-Channel Effects and Device Scaling11 temas
- Electrostatic Scaling and Characteristic Length
- Charge Sharing Between Gate, Source, and Drain
- Threshold-Voltage Roll-Off
- Drain-Induced Barrier Lowering
- Punch-Through and Off-State Leakage
- Gate-Induced Drain Leakage
- Velocity Saturation and the Limits of Geometric Scaling
- Constant-Field Scaling and Its Assumptions
- Supply-Voltage Scaling and Leakage Constraints
- Source-Drain Tunneling at Small Dimensions
- Balancing Electrostatics, Transport, and Parasitic Resistance
35Multigate, FinFET, and Gate-All-Around Devices10 temas
- Gate Control in Two- and Three-Dimensional Structures
- Double-Gate and Multigate Electrostatics
- Fin Width, Fin Height, and Effective Channel Width
- FinFET Threshold and Subthreshold Behavior
- Nanowire and Nanosheet Gate-All-Around Structures
- Confinement and Subband Effects in Narrow Channels
- Fringing Fields and Corner Effects
- Access Resistance and Parasitic Capacitance
- Channel Stacking and Device-Level Tradeoffs
- Comparing Architectures at Matched Electrical Conditions
36Silicon-on-Insulator and Thin-Body Devices10 temas
- Semiconductor Films Above Buried Insulators
- Partially and Fully Depleted Bodies
- Front-Gate and Back-Gate Electrostatic Coupling
- Film Thickness and Depletion Conditions
- Floating-Body Charge and History Dependence
- Parasitic Bipolar Action and the Kink Effect
- Back Bias as a Device-Control Variable
- Junction Capacitance Reduction and Its Consequences
- Heat Removal Through Electrically Isolating Layers
- Distinguishing Thin-Body Effects from Gate-Geometry Effects
37Bipolar Junction Transistor Principles11 temas
- Emitter, Base, and Collector Structure
- NPN and PNP Band Diagrams
- Carrier Injection Across the Emitter-Base Junction
- Minority-Carrier Transport Through the Base
- Collector Extraction and Current Continuity
- Emitter Injection Efficiency
- Base Transport Factor and Current Gain
- Forward-Active, Reverse-Active, Saturation, and Cutoff Regimes
- The Ebers-Moll Description
- Doping and Geometry Requirements for Transistor Action
- Relating Terminal Currents to Internal Carrier Profiles
38Nonideal Bipolar Transistor Behavior10 temas
- Base-Width Modulation and the Early Effect
- Recombination in the Base and Junction Regions
- High-Level Injection and Gain Reduction
- Heavy-Doping Effects in the Emitter
- Base Resistance and Emitter Current Crowding
- Collector Resistance and Quasi-Saturation
- The Kirk Effect and Base Push-Out
- Junction Breakdown in Different Terminal Configurations
- Leakage and Temperature Dependence
- Interpreting Gummel Plots and Output Characteristics
39Bipolar Transistor Charge and High-Frequency Response10 temas
- Stored Charge in the Emitter, Base, and Collector
- Charge-Control Models of Bipolar Transistors
- Base Transit Time and Diffusion Capacitance
- Emitter and Collector Delay Contributions
- Junction Capacitances and Bias Dependence
- Small-Signal Transconductance and Input Conductance
- Current-Gain Cutoff Frequency
- Base Resistance and Maximum Oscillation Frequency
- Saturation Storage and Turn-Off Dynamics
- Connecting Frequency Response to Device Structure
40Heterojunction Bipolar Transistors10 temas
- Bandgap Engineering at the Emitter-Base Junction
- Improving Injection Efficiency with a Wide-Gap Emitter
- Base Doping and Resistance Tradeoffs
- Abrupt and Graded Heterojunctions
- Graded Bases and Built-In Drift Fields
- SiGe and III-V HBT Material Systems
- Heterojunction Band Spikes and Carrier Transport
- Transit-Time and Capacitance Contributions
- Recombination and Interface Quality in HBTs
- Comparing HBT Performance with Homojunction Bipolar Devices
41Junction and Metal-Semiconductor Field-Effect Transistors10 temas
- Junction-Gate Control of a Conducting Channel
- JFET Depletion Profiles and Pinch-Off
- JFET Current-Voltage Characteristics
- Schottky-Gate Control in MESFETs
- Channel Doping, Thickness, and Threshold Behavior
- Depletion-Mode and Enhancement-Mode Operation
- Gate Leakage and Breakdown Constraints
- Channel Resistance and Velocity Saturation
- Small-Signal Device Parameters
- Comparing Junction, Schottky, and Insulated Gate Control
42High-Electron-Mobility Transistors11 temas
- Carrier Confinement at a Heterojunction
- Modulation Doping and Remote Carrier Supply
- Polarization-Induced Two-Dimensional Electron Gases
- Gate Control of Sheet Carrier Density
- Threshold Voltage and Barrier-Layer Electrostatics
- High-Mobility Transport and Velocity Limitations
- Source and Drain Access Regions
- Gate Leakage and Electric-Field Distribution
- Trapping, Current Collapse, and Dynamic Resistance
- Frequency Response and Device-Level Parasitics
- Comparing HEMT Structures Across Material Systems
43Tunneling and Negative-Differential-Resistance Devices11 temas
- Interband Tunneling and Carrier Occupation
- Esaki Tunnel-Diode Operation
- Resonant Tunneling Through Double Barriers
- Quantum-Well States and Resonance Broadening
- Peak-to-Valley Current Ratios
- Tunnel Field-Effect Transistor Band Alignment
- Gate Control of Tunneling Barriers
- Steep-Slope Claims and Their Required Assumptions
- On-Current, Ambipolar Leakage, and Trap-Assisted Transport
- Transferred-Electron Devices and Gunn Domains
- Distinguishing Tunneling from Other Sources of Negative Resistance
Etapa 5
Power, Memory & Emerging Devices
Potencia, memoria y lo que viene
12 módulos · 130 temas
44Power Rectifiers and High-Voltage Junction Devices10 temas
- Drift Regions and Voltage Blocking
- PiN Diodes and Conductivity Modulation
- Carrier Lifetime and Forward-Voltage Tradeoffs
- Reverse Recovery and Charge Extraction
- Schottky Rectifiers and Majority-Carrier Operation
- Junction-Barrier Schottky Structures
- Critical Electric Field and Drift-Region Design
- Edge Termination as an Electrostatic Problem
- Avalanche Behavior and Current Localization
- Comparing Blocking Voltage, Conduction Loss, and Stored Charge
45Power MOSFETs and Insulated-Gate Bipolar Transistors12 temas
- Lateral and Vertical Power-Device Structures
- Channel, Accumulation, Drift, and Contact Resistance
- Specific On-Resistance and Blocking-Voltage Tradeoffs
- Trench Gates and Electric-Field Concentration
- Superjunction Charge Balance
- Intrinsic Body Diodes and Reverse Conduction
- Gate Charge and Nonlinear Terminal Capacitances
- IGBT Carrier Injection and Conductivity Modulation
- Stored Charge and IGBT Turn-Off Tails
- Parasitic Bipolar Action and Current Localization
- Device Safe Operating Area from Physical Limits
- Comparing Unipolar and Bipolar Power-Device Mechanisms
46Thyristors and Regenerative Device Behavior10 temas
- PNPN Structures and Coupled Transistor Action
- Regenerative Feedback and Turn-On
- Gate Triggering and Breakover
- Latching Current and Holding Current
- Carrier Storage and Turn-Off Conditions
- Voltage-Rate and Current-Rate Effects
- Gate-Controlled Turn-Off Structures
- Parasitic Thyristors in Integrated Structures
- Latch-Up as a Carrier-Injection Phenomenon
- Distinguishing Regenerative Switching from Avalanche Breakdown
47Wide-Bandgap and Ultra-Wide-Bandgap Semiconductors11 temas
- Bandgap, Critical Field, Mobility, and Thermal Conductivity
- Silicon Carbide Polytypes and Anisotropy
- SiC Dopant Ionization and Interface Challenges
- Gallium Nitride and Polarization Effects
- Bulk and Heterostructure Conduction in GaN Devices
- Defects, Trapping, and Dynamic Electrical Behavior
- Gate-Dielectric and Contact Constraints
- Ultra-Wide-Bandgap Materials and Doping Challenges
- Material Figures of Merit and Their Assumptions
- Comparing Material Potential with Achievable Device Performance
- Temperature and High-Field Limits Across Material Systems
48Electrothermal Effects and Self-Heating11 temas
- Joule Heating and Local Power Generation
- Carrier Energy Transfer to the Lattice
- Thermal Conductivity and Heat Capacity
- Heat Flow Within a Device Structure
- Thermal Boundary Resistance
- Steady-State and Transient Temperature Rise
- Temperature Dependence of Mobility, Leakage, and Threshold
- Electrothermal Feedback and Thermal Instability
- Current Crowding and Local Hot Spots
- Separating Self-Heating from Purely Electrical Effects
- Coupling Electrical and Thermal Device Models
49Noise and Microscopic Fluctuations11 temas
- Random Processes and Noise Spectral Density
- Thermal Noise and Dissipative Transport
- Shot Noise and Discrete Charge Transfer
- Generation-Recombination Noise
- Flicker Noise and Distributed Time Constants
- Random Telegraph Signals from Individual Defects
- Carrier-Number and Mobility-Fluctuation Models
- Noise in Diodes, MOSFETs, and Bipolar Devices
- Bias, Temperature, Area, and Frequency Dependence
- Referring Device Noise to Input Quantities
- Using Noise as a Probe of Transport and Defects
50Device Degradation and Physical Failure Mechanisms12 temas
- Reversible Charge Trapping and Permanent Damage
- Bias-Temperature Instability
- Hot-Carrier Injection and Interface Degradation
- Dielectric Trap Generation and Breakdown
- Time-Dependent Dielectric Breakdown
- Stress-Induced Leakage Current
- High-Current and Electrothermal Damage
- Radiation-Induced Charge and Displacement Damage
- Single-Event Charge Collection in Semiconductor Structures
- Accelerated Stress Models and Extrapolation Limits
- Connecting Parameter Drift to Microscopic Mechanisms
- Separating Intrinsic Aging from Measurement History
51Charge-Storage Semiconductor Memory Devices11 temas
- Capacitor-Based Charge Storage and Leakage
- Access-Device Contributions to Charge Retention
- Floating-Gate Electrostatics
- Programming by Tunneling and Hot-Carrier Injection
- Erase Mechanisms and Barrier Control
- Charge-Trap Memory Structures
- Stored Charge and Threshold-Voltage Shifts
- Retention, Endurance, and Read Disturb
- Charge Loss Through Defects and Dielectric Barriers
- Distributions of Stored States in Multilevel Cells
- Device-Level Tradeoffs Between Density and State Separation
52Emerging Nonvolatile and Switching Device Physics11 temas
- Resistive Switching in Oxides
- Ionic Motion and Conductive Filament Formation
- Interface-Controlled Resistance Switching
- Phase-Change Materials and Structural State Transitions
- Electrical and Thermal Processes in Phase-Change Switching
- Ferroelectric Polarization and Hysteresis
- Ferroelectric Capacitors and Field-Effect Devices
- Negative-Capacitance Concepts and Stability Conditions
- Magnetic Tunnel Junctions as Integrated Memory Elements
- Retention, Endurance, Variability, and Switching-Energy Tradeoffs
- Distinguishing Physical State Variables in Different Memory Devices
53Low-Dimensional Semiconductor Devices10 temas
- Nanowire Electronic Structure and Surface Sensitivity
- Carbon Nanotube Chirality and Bandgap
- Atomically Thin Semiconductor Channels
- Graphene and the Consequences of a Vanishing Bandgap
- Electrostatic Control in Two-Dimensional Transistors
- Contact Barriers and Carrier Injection at Small Dimensions
- Dielectric Screening and Environmental Charge
- Quantum Capacitance and Carrier-Density Limits
- Transport Anisotropy and Layer Dependence
- Comparing Material Properties with Complete Transistor Performance
54Thin-Film, Disordered, and Organic Semiconductors10 temas
- Crystalline, Polycrystalline, and Amorphous Electronic States
- Band Tails and Localized States
- Trapping, Detrapping, and Multiple-Trapping Transport
- Hopping and Thermally Activated Conduction
- Grain-Boundary Barriers in Polycrystalline Films
- Organic Molecular Levels and Carrier Injection
- Oxide Semiconductor Electronic Structure
- Thin-Film Transistor Electrostatics
- Bias Stress, Hysteresis, and Environmental Sensitivity
- Limits of Applying Crystalline-Silicon Models to Disordered Materials
55Device Variability and Statistical Physical Effects11 temas
- Random Dopant Fluctuations
- Geometry Variation and Electrostatic Sensitivity
- Metal-Gate Work-Function Variability
- Interface-Trap and Fixed-Charge Fluctuations
- Discrete Defects in Small Devices
- Correlated and Independent Sources of Variation
- Area and Volume Scaling of Parameter Distributions
- Device-to-Device and Within-Device Temporal Variation
- Propagating Physical Variation into Terminal Parameters
- Distinguishing Variability from Extraction Uncertainty
- Statistical Device Models and Their Physical Interpretation
Etapa 6
Characterization & Modeling
Medir y modelar dispositivos reales
7 módulos · 80 temas
56Semiconductor Material and Carrier Characterization11 temas
- Resistivity and Sheet-Resistance Measurements
- Four-Point and Van der Pauw Methods
- Hall Effect and Carrier-Type Identification
- Hall Carrier Density, Hall Mobility, and Hall Factors
- Temperature-Dependent Conductivity
- Activation Energies and Carrier Freeze-Out Measurements
- Minority-Carrier Lifetime Measurement Principles
- Optical Absorption as a Bandgap Probe
- Structural and Chemical Measurements as Electrical Context
- Comparing Chemical Doping with Electrically Active Doping
- Separating Bulk, Surface, and Contact Contributions
57DC and Capacitance-Based Device Characterization12 temas
- Bias Conditions, Terminal Definitions, and Measurement Conventions
- Two-Terminal and Four-Terminal I-V Measurements
- Contact and Series-Resistance Corrections
- Diode Ideality-Factor and Saturation-Current Extraction
- MOSFET Transfer and Output Characteristics
- Threshold-Voltage Extraction and Method Dependence
- Transconductance and Output-Conductance Extraction
- Junction and MOS C-V Measurements
- Doping-Profile Extraction and Its Assumptions
- Interface-State Extraction from Capacitance and Conductance
- Guarding, Leakage Paths, and Instrument Limitations
- Checking Parameter Consistency Across Measurement Methods
58Transient, Frequency, and Temperature Measurements11 temas
- Pulsed I-V Measurements and Bias History
- Charge and Discharge Transients
- Minority-Carrier Lifetime from Transient Response
- Deep-Level Transient Spectroscopy Concepts
- Trap Capture and Emission Time Constants
- Admittance Spectroscopy and Frequency Dispersion
- High-Frequency Device Parameter Extraction
- Noise Spectra and Random Telegraph Signal Analysis
- Temperature Sweeps and Activation-Energy Interpretation
- De-Embedding Measurement Connections and External Parasitics
- Distinguishing Device Dynamics from Measurement-System Response
59Analytical and Compact Device Models12 temas
- Physical, Empirical, and Compact Modeling Approaches
- Selecting a Model for a Defined Operating Regime
- Diode Models with Charge Storage and Nonideal Currents
- Charge-Based MOSFET Modeling
- Unifying Weak, Moderate, and Strong Inversion
- Bipolar Charge-Control and Transport Models
- Small-Signal Linearization Around an Operating Point
- Terminal Charge and Current Conservation
- Geometry, Temperature, and Bias Scaling
- Model Smoothness and Numerical Behavior
- Interpreting Fitted Parameters Physically
- Knowing When a Compact Model Is Outside Its Validity Range
60Numerical Device Simulation and TCAD12 temas
- Defining Device Geometry and Material Regions
- Specifying Doping, Interfaces, and Contact Conditions
- Solving Coupled Poisson and Transport Equations
- Mesh Resolution Near Junctions and Interfaces
- Discretization and Current-Conserving Numerical Methods
- Nonlinear Iteration and Convergence Strategies
- Choosing Mobility, Recombination, and Ionization Models
- Including Quantum-Confinement Corrections
- Self-Consistent Schrödinger-Poisson Simulation
- Electrothermal and Transient Simulation
- Extracting Terminal Quantities and Internal Physical Profiles
- Separating Numerical Artifacts from Physical Effects
61Model Calibration and Validation11 temas
- Defining Calibration Targets and Independent Validation Data
- Parameter Sensitivity and Identifiability
- Separating Contact, Channel, and Interface Parameters
- Calibrating Across Multiple Bias Regimes
- Using Temperature Dependence to Discriminate Mechanisms
- Matching DC, Capacitance, and Transient Data Together
- Parameter Correlation and Nonunique Fits
- Quantifying Residual Error and Uncertainty
- Testing Extrapolation Across Geometry and Operating Conditions
- Documenting Model Assumptions and Parameter Provenance
- Rejecting Fits That Violate Physical Constraints
62Device Figures of Merit and Physical Limits11 temas
- On-State Current and Off-State Leakage
- Threshold, Subthreshold Swing, and Electrostatic Control
- Transconductance, Output Conductance, and Intrinsic Gain
- Terminal Charge, Capacitance, and Switching-Energy Measures
- Current-Gain Cutoff and Maximum Oscillation Frequency
- Specific On-Resistance and Breakdown Voltage
- Contact Resistance and Injection Efficiency
- Noise and Minimum Detectable Electrical Signals
- Comparing Devices at Matched Bias, Geometry, and Temperature
- Separating Material Limits from Architecture and Parasitic Limits
- Evaluating Performance Tradeoffs Without Relying on One Metric
Etapa 7
Laboratories & Device Study
Donde los modelos se encuentran con el laboratorio
3 módulos · 33 temas
63Semiconductor Physics Calculation Laboratories10 temas
- Computing Density of States for Different Dimensionalities
- Solving Carrier Statistics Across Doping and Temperature
- Constructing Equilibrium and Biased Band Diagrams
- Comparing Drift, Diffusion, and Quasi-Fermi Descriptions
- Modeling Excess-Carrier Decay and Diffusion
- Solving Abrupt and Graded Junction Electrostatics
- Comparing Ideal and Nonideal Diode Currents
- Calculating MOS Surface Potential and Charge
- Exploring Subthreshold Swing and Body Bias
- Comparing Diffusive and Ballistic Transport Estimates
64Device Characterization and Simulation Laboratories11 temas
- Extracting Material Resistivity and Hall Parameters
- Comparing Contact-Resistance Measurement Methods
- Fitting Diode I-V and C-V Data with Physical Models
- Extracting MOSFET Parameters Across Operating Regimes
- Investigating Interface Traps Through MOS Measurements
- Analyzing Bipolar Transistor Gummel Plots
- Simulating Short-Channel Effects Across Device Geometries
- Comparing Heterojunction and Homojunction Structures
- Separating Self-Heating and Trapping in Pulsed Measurements
- Estimating Device Variability from Repeated Measurements
- Validating a Numerical Device Model Against Independent Data
65Integrated Semiconductor Device Study12 temas
- Defining a Device Function and Physical Performance Targets
- Selecting a Material System and Device Structure
- Constructing Band, Charge, and Electric-Field Models
- Choosing Transport and Recombination Descriptions
- Predicting DC, Charge, and Dynamic Characteristics
- Identifying Contact, Interface, and Thermal Limitations
- Designing a Measurement or Simulation Plan
- Extracting Parameters and Evaluating Uncertainty
- Comparing Alternative Physical Explanations of the Results
- Assessing Scaling, Variability, and Degradation
- Validating Conclusions Against Independent Evidence
- Presenting the Device Model, Results, and Remaining Limitations
Quince minutos.Cada día.
- 1
Una lección cabe en la pausa de la comida
Una idea cada vez, en diapositivas breves. Una lección entera dura unos quince minutos.
- 2
Práctica con corrección al instante
Las preguntas van dentro de la lección. Responde y ve al instante si lo has entendido.
- 3
Una racha que te hace volver
Una lección al día mantiene viva la racha. Sesiones cortas y constantes te llevan hasta el final.
- 1
Una lección cabe en la pausa de la comida
Una idea cada vez, en diapositivas breves. Una lección entera dura unos quince minutos.
- 2
Práctica con corrección al instante
Las preguntas van dentro de la lección. Responde y ve al instante si lo has entendido.
- 3
Una racha que te hace volver
Una lección al día mantiene viva la racha. Sesiones cortas y constantes te llevan hasta el final.
Para quien está bajo el esquemático.
Estudiantes de electrónica que van hacia la fab
Donde más vas a crecer
Dibuja e interpreta diagramas de bandas de energía
Etapa 1 · Physics FoundationsIngenieros de fab que profundizan en dispositivos
Diseñadores de circuitos cansados de cajas negras
A dónde lleva este curso.
El trabajo en torno al que está construido este curso, y cómo se entra en él.
Semiconductor Process Engineer
Opera y mejora un paso de la fabricación de chips dentro de una fab.
Todas las carreras del futuroEn el trabajo
- Mantener dentro de especificación un paso de grabado, deposición o litografía
- Leer los datos de las obleas y encontrar la causa de una caída del rendimiento
- Hacer experimentos para mejorar un proceso
Cómo se entra
Normalmente, un título en física, ciencia de materiales, ingeniería química o eléctrica.
Sé de los primeros.
Acceso anticipado para particulares, pilotos para equipos. Cuéntanos quién va a aprender.
enterprise@astratrainer.com