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Semiconductor Physics & Devices
Versteh einen Transistor so gut, dass du den nächsten designst.
Der komplette Kurs
- Module
- 65
- Themen
- 697
- Min. pro Lektion
- 15
58%
der neuen US-Chipjobs bis 2030 drohen bei heutigen Abschlusszahlen unbesetzt zu bleiben.
Was du danach kannst.
Bänderdiagramme zeichnen und lesen
Etappe 1 · Physics Foundations
Drift, Diffusion und Rekombination modellieren
Etappe 2 · Carrier Transport
PN-, Schottky- und Heteroübergänge analysieren
Etappe 3 · Junctions & Interfaces
MOSFETs erklären, vom Long-Channel bis FinFET
Etappe 4 · Transistors
Silizium-, SiC- und GaN-Leistungsbauelemente vergleichen
Etappe 5 · Power, Memory & Emerging Devices
Parameter extrahieren, TCAD-Modelle kalibrieren
Etappe 6 · Characterization & Modeling
Sieben Etappen.Ein stetiger Aufstieg.
Start beim Kristall. Ende beim Transistor, den du modellierst, misst und erklärst.
65Module
in 7 Etappen
697Themen
≈ 11 pro Modul
≈174Stunden
in Lektionen à 15 Minuten
≈23Monate
≈11Monate
≈6Monate
bis zum Ende des Kurses
- 1
Physics Foundations
Kristalle, Bänder und Ladungsträger
9 Module · 94 Themen · ≈ 24 Std.
- 2
Carrier Transport
Wie Ladung sich wirklich bewegt
8 Module · 86 Themen · ≈ 22 Std.
- 3
Junctions & Interfaces
Wo Materialien aufeinandertreffen
9 Module · 95 Themen · ≈ 24 Std.
- 4
Transistors
Der Schalter hinter jedem Chip
17 Module · 179 Themen · ≈ 45 Std.
- 5
Power, Memory & Emerging Devices
Leistung, Speicher und was als Nächstes kommt
12 Module · 130 Themen · ≈ 33 Std.
- 6
Characterization & Modeling
Reale Bauelemente messen und modellieren
7 Module · 80 Themen · ≈ 20 Std.
- 7
Laboratories & Device Study
Wo Modelle auf das Labor treffen
3 Module · 33 Themen · ≈ 8 Std.
Monate
04812160246801234
MonateZiel · ≈ 23 Monate · ≈ 11 Monate · ≈ 6 Monate
Stunden und Monate sind Schätzungen: eine 15-Minuten-Lektion pro Thema, jeden Tag.
Jedes Modul.Jedes Thema.
Modul- und Themen-Titel bleiben Englisch — die Sprache, in der das Fach arbeitet.
Etappe 1
Physics Foundations
Kristalle, Bänder und Ladungsträger
9 Module · 94 Themen
1Foundations of Semiconductor Physics and Devices10 Themen
- Semiconductors as Controllable Electronic Materials
- Conductors, Semiconductors, and Insulators
- Material Properties and Device Behavior
- Charge, Potential, Current, and Stored Energy
- Electrons and Holes as Charge Carriers
- Equilibrium and Nonequilibrium Device Operation
- Junctions, Contacts, Gates, and Active Regions
- Physical Structures and Terminal Characteristics
- Connecting Microscopic Mechanisms to Measurable Quantities
- Levels of Description in Semiconductor Device Models
2Physical Quantities and Electrostatic Foundations10 Themen
- Units and Scales in Semiconductor Physics
- Electric Charge, Charge Density, and Current Density
- Electric Fields and Electrostatic Potential
- Electron Energy and the Sign of Electrostatic Potential
- Permittivity, Polarization, and Electric Displacement
- Gauss's Law and Poisson's Equation
- Boundary Conditions at Material Interfaces
- Capacitance and Differential Charge Response
- Thermal Energy and Characteristic Energy Scales
- Dimensional Analysis and Order-of-Magnitude Estimates
3Quantum Mechanics for Semiconductor Devices10 Themen
- Wavefunctions and Probability Density
- The Schrödinger Equation and Energy Eigenstates
- Free Electrons and Plane-Wave States
- Momentum, Wavevector, and Wavelength
- Potential Steps and Barrier Transmission
- Tunneling Through Finite Barriers
- Bound States and Quantum Confinement
- The Pauli Exclusion Principle
- Spin Degeneracy and Electronic State Counting
- Effective Models and Their Physical Assumptions
4Crystal Structure and Reciprocal Space10 Themen
- Atomic Bonding in Semiconductor Solids
- Crystal Lattices, Basis Atoms, and Unit Cells
- Diamond, Zinc-Blende, and Wurtzite Structures
- Crystal Directions and Miller Indices
- Crystallographic Planes and Surface Orientation
- Reciprocal Lattices and Brillouin Zones
- Periodicity and Electron Wave Propagation
- Lattice Vibrations and Phonons
- Lattice Mismatch and Crystal Symmetry
- Relating Crystal Structure to Electronic Anisotropy
5Electronic Band Structure12 Themen
- From Atomic Levels to Energy Bands
- Bloch States in Periodic Potentials
- Valence Bands, Conduction Bands, and Bandgaps
- Direct and Indirect Bandgaps
- Energy-Wavevector Relations
- Group Velocity and Band Curvature
- Effective Mass and Effective-Mass Tensors
- Conduction-Band Valleys and Valley Degeneracy
- Heavy-Hole, Light-Hole, and Split-Off Bands
- Band Nonparabolicity
- Temperature and Composition Dependence of Band Structure
- Reading and Comparing Semiconductor Band Diagrams
6Density of States and Electronic State Counting10 Themen
- Counting Allowed States in Wavevector Space
- Three-Dimensional Density of States
- Conduction-Band and Valence-Band State Densities
- Density-of-States Mass and Transport Mass
- Effective Density of States
- Two-Dimensional Subbands and Step-Like State Densities
- One-Dimensional Subbands and Density-of-States Singularities
- Discrete States in Zero-Dimensional Systems
- Valley and Spin Contributions to State Counting
- Connecting Density of States to Carrier Population
7Carrier Statistics at Thermal Equilibrium10 Themen
- The Fermi-Dirac Distribution
- Fermi Level and Chemical Potential
- Electron and Hole Concentration Integrals
- The Nondegenerate Boltzmann Approximation
- Intrinsic Carrier Concentration
- The Intrinsic Fermi Level
- Equilibrium Mass Action and Its Assumptions
- Degenerate Semiconductors and Fermi-Dirac Integrals
- Temperature Dependence of Equilibrium Carrier Densities
- Relating Bandgap and Statistics to Electrical Behavior
8Doping, Ionization, and Charge Neutrality11 Themen
- Donors, Acceptors, and Impurity Energy Levels
- Ionized and Neutral Dopants
- Donor and Acceptor Occupation Statistics
- Charge-Neutrality Equations
- Majority and Minority Carriers
- Compensated Semiconductors
- Freeze-Out, Extrinsic, and Intrinsic Temperature Regimes
- Incomplete Ionization
- Degenerate Doping and Bandgap Narrowing
- Electrically Active Dopants and Chemical Dopant Concentration
- Solving Carrier Concentrations Across Doping Regimes
9Energy-Band Diagrams and Electrochemical Potentials11 Themen
- Choosing Energy References Consistently
- Vacuum Level, Electron Affinity, and Work Function
- Band Bending and Electrostatic Potential
- Fermi-Level Alignment at Equilibrium
- Built-In Fields in Nonuniform Materials
- Band Diagrams Under Applied Voltage
- Electron and Hole Quasi-Fermi Levels
- Quasi-Fermi-Level Splitting and Nonequilibrium Populations
- Relating Quasi-Fermi Gradients to Current Flow
- Distinguishing Contact Voltage from Internal Potential Variation
- Checking Band Diagrams Against Charge and Field Profiles
Etappe 2
Carrier Transport
Wie Ladung sich wirklich bewegt
8 Module · 86 Themen
10Drift Transport, Mobility, and Scattering11 Themen
- Thermal Motion and Field-Induced Drift
- Drift Velocity and Low-Field Mobility
- Conductivity and Resistivity
- Momentum Relaxation and Scattering Time
- Phonon Scattering
- Ionized-Impurity and Neutral-Impurity Scattering
- Mobility Dependence on Temperature and Doping
- Anisotropic Mobility and Multiple Carrier Valleys
- Matthiessen's Rule and Its Limitations
- Electron and Hole Contributions to Conductivity
- Mobility Models and Their Ranges of Validity
11Diffusion and Electrochemical Transport10 Themen
- Diffusion Driven by Carrier-Concentration Gradients
- Electron and Hole Diffusion Currents
- The Einstein Relation for Nondegenerate Carriers
- Generalized Diffusion-Mobility Relations
- Drift-Diffusion Balance at Equilibrium
- Built-In Fields in Graded Doping Profiles
- Diffusion Length and Diffusion Time
- Ambipolar Transport of Excess Carriers
- Diffusion with Spatially Varying Material Properties
- Current Direction, Carrier Motion, and Sign Conventions
12Defects, Strain, and Material Quality10 Themen
- Vacancies, Interstitials, and Substitutional Defects
- Defect Charge States and Electronic Levels
- Dislocations, Stacking Faults, and Grain Boundaries
- Impurity Complexes and Compensation Centers
- Strain and Changes in Band Energies
- Strain-Induced Band Splitting and Carrier Mobility
- Piezoelectric and Spontaneous Polarization
- Localized States and Defect-Assisted Conduction
- Material Inhomogeneity and Electrical Nonuniformity
- Connecting Defect Populations to Device Limitations
13Carrier Generation and Recombination11 Themen
- Thermal Generation and Detailed Balance
- Band-to-Band Recombination
- Radiative and Nonradiative Recombination
- Optical Carrier Generation and Absorption Depth
- Shockley-Read-Hall Recombination Through Defects
- Capture Cross Sections and Trap Occupation
- Auger Recombination
- Low-Injection and High-Injection Lifetimes
- Surface Recombination Velocity
- Spatial Dependence of Generation and Recombination
- Effective Lifetime and Competing Recombination Mechanisms
14Nonequilibrium Carrier Dynamics11 Themen
- Excess Electron and Hole Populations
- Low-Level and High-Level Injection
- Carrier Continuity Equations
- Steady-State and Transient Carrier Profiles
- Minority-Carrier Diffusion Equations
- Boundary Conditions at Contacts and Surfaces
- Carrier Decay After Excitation
- Drift, Diffusion, and Recombination Time Scales
- Ambipolar Diffusion Under High Injection
- Quasi-Neutrality and Dielectric Relaxation
- Interpreting Spatially and Temporally Resolved Carrier Behavior
15Coupled Semiconductor Device Equations11 Themen
- Poisson's Equation Coupled to Carrier Statistics
- Electron and Hole Current Equations
- Continuity Equations with Generation and Recombination
- Charge Conservation and Terminal Current
- Displacement Current in Time-Dependent Operation
- Electrostatic and Carrier Boundary Conditions
- Quasi-Neutral and Space-Charge Regions
- Steady-State, Transient, and Small-Signal Formulations
- Quasi-Static Approximations
- Scaling Variables and Characteristic Device Lengths
- Identifying When Drift-Diffusion Models Become Inadequate
16High-Field and Nonequilibrium Transport11 Themen
- Field-Dependent Mobility and Velocity Saturation
- Carrier Heating and Energy Relaxation
- Momentum and Energy Relaxation Lengths
- The Boltzmann Transport Equation
- Relaxation-Time Approximations
- Intervalley Transfer and Negative Differential Mobility
- Velocity Overshoot in Short Structures
- Impact Ionization and Carrier Multiplication
- Energy-Transport and Hydrodynamic Models
- Ensemble Monte Carlo Transport Concepts
- Distinguishing Local and Nonlocal Transport Effects
17Ballistic and Quantum Transport11 Themen
- Mean Free Path and Transport Regimes
- Ballistic and Quasi-Ballistic Conduction
- Contacts as Carrier Reservoirs
- Transmission Probabilities and Conducting Modes
- The Landauer Description of Current
- Quantum Conductance and Contact Contributions
- Injection Velocity and Backscattering
- Coherent and Incoherent Transport
- Tunneling Currents in Nanoscale Structures
- Nonequilibrium Green's Function Concepts
- Comparing Quantum Transport with Drift-Diffusion Predictions
Etappe 3
Junctions & Interfaces
Wo Materialien aufeinandertreffen
9 Module · 95 Themen
18PN Junction Electrostatics11 Themen
- Formation of a PN Junction
- Space Charge and the Depletion Approximation
- Built-In Potential and Equilibrium Band Bending
- Abrupt and Linearly Graded Junctions
- One-Sided Junction Approximations
- Electric-Field and Potential Profiles
- Depletion Width Under Applied Bias
- Charge Neutrality Across the Junction
- Junction Capacitance from Depletion Charge
- Temperature and Doping Effects on Junction Electrostatics
- Limits of the Depletion Approximation
19PN Junction Current-Voltage Characteristics11 Themen
- Carrier Injection Under Forward Bias
- Minority-Carrier Boundary Conditions
- Diffusion Currents in Neutral Regions
- Deriving the Ideal Diode Equation
- Saturation Current and Material Parameters
- Short-Base and Long-Base Diodes
- Reverse-Bias Current Mechanisms
- Temperature Dependence of Junction Current
- Junction Current Under Illumination
- Extracting Physical Meaning from Semilogarithmic I-V Curves
- Identifying the Assumptions Behind Ideal Junction Models
20PN Junction Charge Storage and Dynamics10 Themen
- Excess Minority-Carrier Storage
- Charge-Control Descriptions of Diodes
- Diffusion Capacitance
- Depletion and Diffusion Contributions to Admittance
- Small-Signal Conductance and Frequency Response
- Forward Turn-On Transients
- Reverse Recovery and Stored-Charge Removal
- Lifetime, Transit Time, and Switching Behavior
- Bias and Temperature Dependence of Junction Dynamics
- Connecting Transient Measurements to Carrier Transport
21Nonideal Junction Behavior and Breakdown11 Themen
- Recombination Current in the Depletion Region
- High-Level Injection and Ideality-Factor Changes
- Series Resistance and Current Crowding
- Surface and Perimeter Leakage
- Trap-Assisted Tunneling
- Band-to-Band Tunneling Breakdown
- Avalanche Breakdown and Ionization Coefficients
- Breakdown Voltage and Doping Dependence
- Junction Curvature and Field Crowding
- Punch-Through and Reach-Through
- Distinguishing Breakdown Mechanisms from Measured Behavior
22Metal-Semiconductor Junctions and Schottky Barriers11 Themen
- Metal and Semiconductor Work Functions
- Ideal Schottky-Mott Band Alignment
- Depletion and Accumulation at Metal Contacts
- Schottky Barrier Height and Built-In Potential
- Fermi-Level Pinning and Interface States
- Thermionic Emission Across a Barrier
- Thermionic-Field Emission and Field Emission
- Image-Force Barrier Lowering
- Schottky Junction Capacitance
- Barrier Inhomogeneity and Nonideal I-V Characteristics
- Temperature-Dependent Barrier Extraction
23Ohmic Contacts and Contact Resistance10 Themen
- Rectifying and Nonrectifying Contact Behavior
- Tunneling Through Thin Contact Barriers
- Specific Contact Resistivity
- Contact Resistance and Access Resistance
- Current Crowding and Transfer Length
- Contact Geometry and Effective Injection Area
- Transmission-Line and Kelvin Measurement Concepts
- Temperature Dependence of Contact Transport
- Contacts to Low-Dimensional and Heavily Doped Materials
- Separating Contact Limitations from Channel Limitations
24Heterojunctions and Band Alignment11 Themen
- Homojunctions and Heterojunctions
- Conduction-Band and Valence-Band Offsets
- Type-I, Type-II, and Broken-Gap Alignments
- Electron-Affinity Models and Their Limitations
- Interface Dipoles and Chemical Bonding Effects
- Charge Transfer and Fermi-Level Alignment
- Carrier Confinement at Material Interfaces
- Strain and Polarization in Heterostructures
- Thermionic and Tunneling Transport Across Heterojunctions
- Recombination and Defect Effects at Heterointerfaces
- Constructing Self-Consistent Heterojunction Band Diagrams
25Quantum Wells and Confined Carrier Systems10 Themen
- Finite Quantum Wells and Bound-State Energies
- Subband Formation and Occupation
- Two-Dimensional Electron and Hole Gases
- Triangular Wells at Semiconductor Interfaces
- Self-Consistent Schrödinger-Poisson Solutions
- Wavefunction Penetration and Charge Centroids
- Quantum Capacitance and Finite Density of States
- Quantum Wires and Nanowire Subbands
- Quantum Dots and Discrete Charging States
- Confinement Effects on Transport and Electrostatics
26Semiconductor Surfaces and Interface States10 Themen
- Surface Termination and Dangling Bonds
- Surface States and Interface-State Distributions
- Surface Charge and Band Bending
- Occupancy of Donor-Like and Acceptor-Like States
- Surface Fermi-Level Pinning
- Interface-Trap Capture and Emission
- Surface Accumulation, Depletion, and Inversion
- Surface Recombination and Carrier Lifetime
- Passivation as an Electronic Boundary Condition
- Distinguishing Fixed Charge from Responsive Trap Charge
Etappe 4
Transistors
Der Schalter hinter jedem Chip
17 Module · 179 Themen
27Ideal MOS Capacitor Electrostatics11 Themen
- The Metal-Insulator-Semiconductor Structure
- Work-Function Difference and Flat-Band Voltage
- Voltage Division Across Oxide and Semiconductor
- Accumulation, Depletion, and Inversion Regimes
- Surface Potential and Semiconductor Charge
- Solving the MOS Poisson-Boltzmann Problem
- Maximum Depletion Width
- Strong-Inversion Criteria and Threshold Voltage
- Oxide Thickness and Gate Capacitance
- Substrate Doping and Electrostatic Response
- Interpreting MOS Energy-Band Diagrams Under Bias
28MOS Capacitance and Dynamic Response10 Themen
- Differential MOS Capacitance
- Quasi-Static and High-Frequency C-V Characteristics
- Minority-Carrier Response and Measurement Frequency
- Deep Depletion and Recovery Toward Equilibrium
- Generation Lifetime and Inversion-Layer Formation
- Conductance and Dissipative Response
- Temperature Dependence of MOS Measurements
- Three-Terminal MOS Structures and Carrier Supply
- Extracting Oxide Capacitance and Doping Information
- Recognizing Measurement Conditions That Alter C-V Interpretation
29Nonideal MOS Interfaces and Gate Dielectrics11 Themen
- Fixed Oxide Charge and Flat-Band Shifts
- Interface Traps and C-V Stretch-Out
- Border Traps and Time-Dependent Charge Exchange
- Mobile Charge and Hysteresis
- Dielectric Constant and Equivalent Oxide Thickness
- Band Offsets and Carrier Injection Barriers
- Direct Tunneling and Fowler-Nordheim Tunneling
- Trap-Assisted Gate Leakage
- High-k Interfaces and Mobility Degradation
- Quantum and Charge-Centroid Corrections to Gate Capacitance
- Relating Dielectric Properties to Electrostatic Control
30Long-Channel MOSFET Operation11 Themen
- Source, Drain, Gate, and Body Functions
- Channel Formation and Inversion Charge
- The Gradual-Channel Approximation
- Charge-Sheet Models of the Inversion Layer
- Deriving the Linear-Region Drain Current
- Channel Pinch-Off and Current Saturation
- Electron and Hole MOSFET Conventions
- Gate Overdrive and Channel Conductance
- Drain-Current Dependence on Geometry and Material Parameters
- Channel-Length Modulation in Long-Channel Models
- Assumptions Behind the Square-Law MOSFET Model
31MOSFET Subthreshold Operation and Body Effects10 Themen
- Diffusion-Dominated Current in Weak Inversion
- Subthreshold Current and Surface Potential
- Subthreshold Swing and Electrostatic Coupling
- The Thermal Swing Limit and Its Assumptions
- Moderate Inversion and Regime Transitions
- Body Bias and Threshold-Voltage Variation
- Depletion Charge and the Body-Effect Coefficient
- Transconductance Efficiency Across Inversion Regimes
- Temperature Dependence of Off-State Current
- Separating Threshold Shifts from Mobility Changes
32Inversion-Layer Transport and Current Limitations11 Themen
- Effective Mobility in a Confined Channel
- Vertical-Field Dependence of Carrier Transport
- Coulomb and Surface-Roughness Scattering
- Phonon Scattering in Inversion Layers
- Velocity Saturation Along the Channel
- Source Injection and the Top-of-the-Barrier Picture
- Backscattering in Quasi-Ballistic MOSFETs
- Contact and Access Resistance in Measured Drain Current
- Strain, Crystal Orientation, and Channel Material
- Distinguishing Electrostatic and Transport Improvements
- Comparing Drift-Diffusion and Ballistic Current Limits
33MOSFET Charge, Capacitance, and Frequency Response11 Themen
- Terminal Charges and Charge Conservation
- Gate, Channel, Body, and Junction Charge Contributions
- Charge Partition Between Source and Drain
- Intrinsic Capacitance Matrices
- Overlap and Fringing Capacitances
- Small-Signal Transconductance and Output Conductance
- Body Transconductance
- Quasi-Static and Non-Quasi-Static Response
- Carrier Transit Time and Charge Relaxation
- Intrinsic Current-Gain Cutoff Frequency
- Separating Intrinsic Device Response from External Parasitics
34Short-Channel Effects and Device Scaling11 Themen
- Electrostatic Scaling and Characteristic Length
- Charge Sharing Between Gate, Source, and Drain
- Threshold-Voltage Roll-Off
- Drain-Induced Barrier Lowering
- Punch-Through and Off-State Leakage
- Gate-Induced Drain Leakage
- Velocity Saturation and the Limits of Geometric Scaling
- Constant-Field Scaling and Its Assumptions
- Supply-Voltage Scaling and Leakage Constraints
- Source-Drain Tunneling at Small Dimensions
- Balancing Electrostatics, Transport, and Parasitic Resistance
35Multigate, FinFET, and Gate-All-Around Devices10 Themen
- Gate Control in Two- and Three-Dimensional Structures
- Double-Gate and Multigate Electrostatics
- Fin Width, Fin Height, and Effective Channel Width
- FinFET Threshold and Subthreshold Behavior
- Nanowire and Nanosheet Gate-All-Around Structures
- Confinement and Subband Effects in Narrow Channels
- Fringing Fields and Corner Effects
- Access Resistance and Parasitic Capacitance
- Channel Stacking and Device-Level Tradeoffs
- Comparing Architectures at Matched Electrical Conditions
36Silicon-on-Insulator and Thin-Body Devices10 Themen
- Semiconductor Films Above Buried Insulators
- Partially and Fully Depleted Bodies
- Front-Gate and Back-Gate Electrostatic Coupling
- Film Thickness and Depletion Conditions
- Floating-Body Charge and History Dependence
- Parasitic Bipolar Action and the Kink Effect
- Back Bias as a Device-Control Variable
- Junction Capacitance Reduction and Its Consequences
- Heat Removal Through Electrically Isolating Layers
- Distinguishing Thin-Body Effects from Gate-Geometry Effects
37Bipolar Junction Transistor Principles11 Themen
- Emitter, Base, and Collector Structure
- NPN and PNP Band Diagrams
- Carrier Injection Across the Emitter-Base Junction
- Minority-Carrier Transport Through the Base
- Collector Extraction and Current Continuity
- Emitter Injection Efficiency
- Base Transport Factor and Current Gain
- Forward-Active, Reverse-Active, Saturation, and Cutoff Regimes
- The Ebers-Moll Description
- Doping and Geometry Requirements for Transistor Action
- Relating Terminal Currents to Internal Carrier Profiles
38Nonideal Bipolar Transistor Behavior10 Themen
- Base-Width Modulation and the Early Effect
- Recombination in the Base and Junction Regions
- High-Level Injection and Gain Reduction
- Heavy-Doping Effects in the Emitter
- Base Resistance and Emitter Current Crowding
- Collector Resistance and Quasi-Saturation
- The Kirk Effect and Base Push-Out
- Junction Breakdown in Different Terminal Configurations
- Leakage and Temperature Dependence
- Interpreting Gummel Plots and Output Characteristics
39Bipolar Transistor Charge and High-Frequency Response10 Themen
- Stored Charge in the Emitter, Base, and Collector
- Charge-Control Models of Bipolar Transistors
- Base Transit Time and Diffusion Capacitance
- Emitter and Collector Delay Contributions
- Junction Capacitances and Bias Dependence
- Small-Signal Transconductance and Input Conductance
- Current-Gain Cutoff Frequency
- Base Resistance and Maximum Oscillation Frequency
- Saturation Storage and Turn-Off Dynamics
- Connecting Frequency Response to Device Structure
40Heterojunction Bipolar Transistors10 Themen
- Bandgap Engineering at the Emitter-Base Junction
- Improving Injection Efficiency with a Wide-Gap Emitter
- Base Doping and Resistance Tradeoffs
- Abrupt and Graded Heterojunctions
- Graded Bases and Built-In Drift Fields
- SiGe and III-V HBT Material Systems
- Heterojunction Band Spikes and Carrier Transport
- Transit-Time and Capacitance Contributions
- Recombination and Interface Quality in HBTs
- Comparing HBT Performance with Homojunction Bipolar Devices
41Junction and Metal-Semiconductor Field-Effect Transistors10 Themen
- Junction-Gate Control of a Conducting Channel
- JFET Depletion Profiles and Pinch-Off
- JFET Current-Voltage Characteristics
- Schottky-Gate Control in MESFETs
- Channel Doping, Thickness, and Threshold Behavior
- Depletion-Mode and Enhancement-Mode Operation
- Gate Leakage and Breakdown Constraints
- Channel Resistance and Velocity Saturation
- Small-Signal Device Parameters
- Comparing Junction, Schottky, and Insulated Gate Control
42High-Electron-Mobility Transistors11 Themen
- Carrier Confinement at a Heterojunction
- Modulation Doping and Remote Carrier Supply
- Polarization-Induced Two-Dimensional Electron Gases
- Gate Control of Sheet Carrier Density
- Threshold Voltage and Barrier-Layer Electrostatics
- High-Mobility Transport and Velocity Limitations
- Source and Drain Access Regions
- Gate Leakage and Electric-Field Distribution
- Trapping, Current Collapse, and Dynamic Resistance
- Frequency Response and Device-Level Parasitics
- Comparing HEMT Structures Across Material Systems
43Tunneling and Negative-Differential-Resistance Devices11 Themen
- Interband Tunneling and Carrier Occupation
- Esaki Tunnel-Diode Operation
- Resonant Tunneling Through Double Barriers
- Quantum-Well States and Resonance Broadening
- Peak-to-Valley Current Ratios
- Tunnel Field-Effect Transistor Band Alignment
- Gate Control of Tunneling Barriers
- Steep-Slope Claims and Their Required Assumptions
- On-Current, Ambipolar Leakage, and Trap-Assisted Transport
- Transferred-Electron Devices and Gunn Domains
- Distinguishing Tunneling from Other Sources of Negative Resistance
Etappe 5
Power, Memory & Emerging Devices
Leistung, Speicher und was als Nächstes kommt
12 Module · 130 Themen
44Power Rectifiers and High-Voltage Junction Devices10 Themen
- Drift Regions and Voltage Blocking
- PiN Diodes and Conductivity Modulation
- Carrier Lifetime and Forward-Voltage Tradeoffs
- Reverse Recovery and Charge Extraction
- Schottky Rectifiers and Majority-Carrier Operation
- Junction-Barrier Schottky Structures
- Critical Electric Field and Drift-Region Design
- Edge Termination as an Electrostatic Problem
- Avalanche Behavior and Current Localization
- Comparing Blocking Voltage, Conduction Loss, and Stored Charge
45Power MOSFETs and Insulated-Gate Bipolar Transistors12 Themen
- Lateral and Vertical Power-Device Structures
- Channel, Accumulation, Drift, and Contact Resistance
- Specific On-Resistance and Blocking-Voltage Tradeoffs
- Trench Gates and Electric-Field Concentration
- Superjunction Charge Balance
- Intrinsic Body Diodes and Reverse Conduction
- Gate Charge and Nonlinear Terminal Capacitances
- IGBT Carrier Injection and Conductivity Modulation
- Stored Charge and IGBT Turn-Off Tails
- Parasitic Bipolar Action and Current Localization
- Device Safe Operating Area from Physical Limits
- Comparing Unipolar and Bipolar Power-Device Mechanisms
46Thyristors and Regenerative Device Behavior10 Themen
- PNPN Structures and Coupled Transistor Action
- Regenerative Feedback and Turn-On
- Gate Triggering and Breakover
- Latching Current and Holding Current
- Carrier Storage and Turn-Off Conditions
- Voltage-Rate and Current-Rate Effects
- Gate-Controlled Turn-Off Structures
- Parasitic Thyristors in Integrated Structures
- Latch-Up as a Carrier-Injection Phenomenon
- Distinguishing Regenerative Switching from Avalanche Breakdown
47Wide-Bandgap and Ultra-Wide-Bandgap Semiconductors11 Themen
- Bandgap, Critical Field, Mobility, and Thermal Conductivity
- Silicon Carbide Polytypes and Anisotropy
- SiC Dopant Ionization and Interface Challenges
- Gallium Nitride and Polarization Effects
- Bulk and Heterostructure Conduction in GaN Devices
- Defects, Trapping, and Dynamic Electrical Behavior
- Gate-Dielectric and Contact Constraints
- Ultra-Wide-Bandgap Materials and Doping Challenges
- Material Figures of Merit and Their Assumptions
- Comparing Material Potential with Achievable Device Performance
- Temperature and High-Field Limits Across Material Systems
48Electrothermal Effects and Self-Heating11 Themen
- Joule Heating and Local Power Generation
- Carrier Energy Transfer to the Lattice
- Thermal Conductivity and Heat Capacity
- Heat Flow Within a Device Structure
- Thermal Boundary Resistance
- Steady-State and Transient Temperature Rise
- Temperature Dependence of Mobility, Leakage, and Threshold
- Electrothermal Feedback and Thermal Instability
- Current Crowding and Local Hot Spots
- Separating Self-Heating from Purely Electrical Effects
- Coupling Electrical and Thermal Device Models
49Noise and Microscopic Fluctuations11 Themen
- Random Processes and Noise Spectral Density
- Thermal Noise and Dissipative Transport
- Shot Noise and Discrete Charge Transfer
- Generation-Recombination Noise
- Flicker Noise and Distributed Time Constants
- Random Telegraph Signals from Individual Defects
- Carrier-Number and Mobility-Fluctuation Models
- Noise in Diodes, MOSFETs, and Bipolar Devices
- Bias, Temperature, Area, and Frequency Dependence
- Referring Device Noise to Input Quantities
- Using Noise as a Probe of Transport and Defects
50Device Degradation and Physical Failure Mechanisms12 Themen
- Reversible Charge Trapping and Permanent Damage
- Bias-Temperature Instability
- Hot-Carrier Injection and Interface Degradation
- Dielectric Trap Generation and Breakdown
- Time-Dependent Dielectric Breakdown
- Stress-Induced Leakage Current
- High-Current and Electrothermal Damage
- Radiation-Induced Charge and Displacement Damage
- Single-Event Charge Collection in Semiconductor Structures
- Accelerated Stress Models and Extrapolation Limits
- Connecting Parameter Drift to Microscopic Mechanisms
- Separating Intrinsic Aging from Measurement History
51Charge-Storage Semiconductor Memory Devices11 Themen
- Capacitor-Based Charge Storage and Leakage
- Access-Device Contributions to Charge Retention
- Floating-Gate Electrostatics
- Programming by Tunneling and Hot-Carrier Injection
- Erase Mechanisms and Barrier Control
- Charge-Trap Memory Structures
- Stored Charge and Threshold-Voltage Shifts
- Retention, Endurance, and Read Disturb
- Charge Loss Through Defects and Dielectric Barriers
- Distributions of Stored States in Multilevel Cells
- Device-Level Tradeoffs Between Density and State Separation
52Emerging Nonvolatile and Switching Device Physics11 Themen
- Resistive Switching in Oxides
- Ionic Motion and Conductive Filament Formation
- Interface-Controlled Resistance Switching
- Phase-Change Materials and Structural State Transitions
- Electrical and Thermal Processes in Phase-Change Switching
- Ferroelectric Polarization and Hysteresis
- Ferroelectric Capacitors and Field-Effect Devices
- Negative-Capacitance Concepts and Stability Conditions
- Magnetic Tunnel Junctions as Integrated Memory Elements
- Retention, Endurance, Variability, and Switching-Energy Tradeoffs
- Distinguishing Physical State Variables in Different Memory Devices
53Low-Dimensional Semiconductor Devices10 Themen
- Nanowire Electronic Structure and Surface Sensitivity
- Carbon Nanotube Chirality and Bandgap
- Atomically Thin Semiconductor Channels
- Graphene and the Consequences of a Vanishing Bandgap
- Electrostatic Control in Two-Dimensional Transistors
- Contact Barriers and Carrier Injection at Small Dimensions
- Dielectric Screening and Environmental Charge
- Quantum Capacitance and Carrier-Density Limits
- Transport Anisotropy and Layer Dependence
- Comparing Material Properties with Complete Transistor Performance
54Thin-Film, Disordered, and Organic Semiconductors10 Themen
- Crystalline, Polycrystalline, and Amorphous Electronic States
- Band Tails and Localized States
- Trapping, Detrapping, and Multiple-Trapping Transport
- Hopping and Thermally Activated Conduction
- Grain-Boundary Barriers in Polycrystalline Films
- Organic Molecular Levels and Carrier Injection
- Oxide Semiconductor Electronic Structure
- Thin-Film Transistor Electrostatics
- Bias Stress, Hysteresis, and Environmental Sensitivity
- Limits of Applying Crystalline-Silicon Models to Disordered Materials
55Device Variability and Statistical Physical Effects11 Themen
- Random Dopant Fluctuations
- Geometry Variation and Electrostatic Sensitivity
- Metal-Gate Work-Function Variability
- Interface-Trap and Fixed-Charge Fluctuations
- Discrete Defects in Small Devices
- Correlated and Independent Sources of Variation
- Area and Volume Scaling of Parameter Distributions
- Device-to-Device and Within-Device Temporal Variation
- Propagating Physical Variation into Terminal Parameters
- Distinguishing Variability from Extraction Uncertainty
- Statistical Device Models and Their Physical Interpretation
Etappe 6
Characterization & Modeling
Reale Bauelemente messen und modellieren
7 Module · 80 Themen
56Semiconductor Material and Carrier Characterization11 Themen
- Resistivity and Sheet-Resistance Measurements
- Four-Point and Van der Pauw Methods
- Hall Effect and Carrier-Type Identification
- Hall Carrier Density, Hall Mobility, and Hall Factors
- Temperature-Dependent Conductivity
- Activation Energies and Carrier Freeze-Out Measurements
- Minority-Carrier Lifetime Measurement Principles
- Optical Absorption as a Bandgap Probe
- Structural and Chemical Measurements as Electrical Context
- Comparing Chemical Doping with Electrically Active Doping
- Separating Bulk, Surface, and Contact Contributions
57DC and Capacitance-Based Device Characterization12 Themen
- Bias Conditions, Terminal Definitions, and Measurement Conventions
- Two-Terminal and Four-Terminal I-V Measurements
- Contact and Series-Resistance Corrections
- Diode Ideality-Factor and Saturation-Current Extraction
- MOSFET Transfer and Output Characteristics
- Threshold-Voltage Extraction and Method Dependence
- Transconductance and Output-Conductance Extraction
- Junction and MOS C-V Measurements
- Doping-Profile Extraction and Its Assumptions
- Interface-State Extraction from Capacitance and Conductance
- Guarding, Leakage Paths, and Instrument Limitations
- Checking Parameter Consistency Across Measurement Methods
58Transient, Frequency, and Temperature Measurements11 Themen
- Pulsed I-V Measurements and Bias History
- Charge and Discharge Transients
- Minority-Carrier Lifetime from Transient Response
- Deep-Level Transient Spectroscopy Concepts
- Trap Capture and Emission Time Constants
- Admittance Spectroscopy and Frequency Dispersion
- High-Frequency Device Parameter Extraction
- Noise Spectra and Random Telegraph Signal Analysis
- Temperature Sweeps and Activation-Energy Interpretation
- De-Embedding Measurement Connections and External Parasitics
- Distinguishing Device Dynamics from Measurement-System Response
59Analytical and Compact Device Models12 Themen
- Physical, Empirical, and Compact Modeling Approaches
- Selecting a Model for a Defined Operating Regime
- Diode Models with Charge Storage and Nonideal Currents
- Charge-Based MOSFET Modeling
- Unifying Weak, Moderate, and Strong Inversion
- Bipolar Charge-Control and Transport Models
- Small-Signal Linearization Around an Operating Point
- Terminal Charge and Current Conservation
- Geometry, Temperature, and Bias Scaling
- Model Smoothness and Numerical Behavior
- Interpreting Fitted Parameters Physically
- Knowing When a Compact Model Is Outside Its Validity Range
60Numerical Device Simulation and TCAD12 Themen
- Defining Device Geometry and Material Regions
- Specifying Doping, Interfaces, and Contact Conditions
- Solving Coupled Poisson and Transport Equations
- Mesh Resolution Near Junctions and Interfaces
- Discretization and Current-Conserving Numerical Methods
- Nonlinear Iteration and Convergence Strategies
- Choosing Mobility, Recombination, and Ionization Models
- Including Quantum-Confinement Corrections
- Self-Consistent Schrödinger-Poisson Simulation
- Electrothermal and Transient Simulation
- Extracting Terminal Quantities and Internal Physical Profiles
- Separating Numerical Artifacts from Physical Effects
61Model Calibration and Validation11 Themen
- Defining Calibration Targets and Independent Validation Data
- Parameter Sensitivity and Identifiability
- Separating Contact, Channel, and Interface Parameters
- Calibrating Across Multiple Bias Regimes
- Using Temperature Dependence to Discriminate Mechanisms
- Matching DC, Capacitance, and Transient Data Together
- Parameter Correlation and Nonunique Fits
- Quantifying Residual Error and Uncertainty
- Testing Extrapolation Across Geometry and Operating Conditions
- Documenting Model Assumptions and Parameter Provenance
- Rejecting Fits That Violate Physical Constraints
62Device Figures of Merit and Physical Limits11 Themen
- On-State Current and Off-State Leakage
- Threshold, Subthreshold Swing, and Electrostatic Control
- Transconductance, Output Conductance, and Intrinsic Gain
- Terminal Charge, Capacitance, and Switching-Energy Measures
- Current-Gain Cutoff and Maximum Oscillation Frequency
- Specific On-Resistance and Breakdown Voltage
- Contact Resistance and Injection Efficiency
- Noise and Minimum Detectable Electrical Signals
- Comparing Devices at Matched Bias, Geometry, and Temperature
- Separating Material Limits from Architecture and Parasitic Limits
- Evaluating Performance Tradeoffs Without Relying on One Metric
Etappe 7
Laboratories & Device Study
Wo Modelle auf das Labor treffen
3 Module · 33 Themen
63Semiconductor Physics Calculation Laboratories10 Themen
- Computing Density of States for Different Dimensionalities
- Solving Carrier Statistics Across Doping and Temperature
- Constructing Equilibrium and Biased Band Diagrams
- Comparing Drift, Diffusion, and Quasi-Fermi Descriptions
- Modeling Excess-Carrier Decay and Diffusion
- Solving Abrupt and Graded Junction Electrostatics
- Comparing Ideal and Nonideal Diode Currents
- Calculating MOS Surface Potential and Charge
- Exploring Subthreshold Swing and Body Bias
- Comparing Diffusive and Ballistic Transport Estimates
64Device Characterization and Simulation Laboratories11 Themen
- Extracting Material Resistivity and Hall Parameters
- Comparing Contact-Resistance Measurement Methods
- Fitting Diode I-V and C-V Data with Physical Models
- Extracting MOSFET Parameters Across Operating Regimes
- Investigating Interface Traps Through MOS Measurements
- Analyzing Bipolar Transistor Gummel Plots
- Simulating Short-Channel Effects Across Device Geometries
- Comparing Heterojunction and Homojunction Structures
- Separating Self-Heating and Trapping in Pulsed Measurements
- Estimating Device Variability from Repeated Measurements
- Validating a Numerical Device Model Against Independent Data
65Integrated Semiconductor Device Study12 Themen
- Defining a Device Function and Physical Performance Targets
- Selecting a Material System and Device Structure
- Constructing Band, Charge, and Electric-Field Models
- Choosing Transport and Recombination Descriptions
- Predicting DC, Charge, and Dynamic Characteristics
- Identifying Contact, Interface, and Thermal Limitations
- Designing a Measurement or Simulation Plan
- Extracting Parameters and Evaluating Uncertainty
- Comparing Alternative Physical Explanations of the Results
- Assessing Scaling, Variability, and Degradation
- Validating Conclusions Against Independent Evidence
- Presenting the Device Model, Results, and Remaining Limitations
Fünfzehn Minuten.Jeden Tag.
- 1
Eine Lektion passt in die Mittagspause
Eine Idee nach der anderen, auf kurzen Folien. Eine ganze Lektion dauert etwa fünfzehn Minuten.
- 2
Übung mit sofortigem Feedback
Die Fragen stecken in der Lektion. Antworte und sieh sofort, ob es sitzt.
- 3
Eine Serie, die dich zurückholt
Eine Lektion am Tag hält die Serie am Leben. Kleine, stetige Schritte tragen dich durch.
- 1
Eine Lektion passt in die Mittagspause
Eine Idee nach der anderen, auf kurzen Folien. Eine ganze Lektion dauert etwa fünfzehn Minuten.
- 2
Übung mit sofortigem Feedback
Die Fragen stecken in der Lektion. Antworte und sieh sofort, ob es sitzt.
- 3
Eine Serie, die dich zurückholt
Eine Lektion am Tag hält die Serie am Leben. Kleine, stetige Schritte tragen dich durch.
Für alle unter dem Schaltplan.
E-Technik-Studierende auf dem Weg zur Fab
Fab-Ingenieure, die tiefer in Bauelemente gehen
Wo du am meisten wächst
Parameter extrahieren, TCAD-Modelle kalibrieren
Etappe 6 · Characterization & ModelingSchaltungsdesigner, die Black Boxes satt haben
Wohin dieser Kurs führt.
Der Job, um den dieser Kurs gebaut ist, und wie Menschen hineinkommen.
Semiconductor Process Engineer
Betreibt und verbessert einen Schritt der Chipfertigung in einer Fab.
Alle ZukunftsberufeIm Job
- Einen Ätz-, Abscheidungs- oder Lithografieschritt innerhalb der Spezifikation halten
- Wafer-Daten lesen und die Ursache eines Ausbeuteverlusts finden
- Experimente fahren, um einen Prozess zu verbessern
So kommt man hinein
Meist ein Studium in Physik, Materialwissenschaft, Chemie- oder Elektrotechnik.
Sei von Anfang an dabei.
Frühzugriff für Einzelpersonen, Piloten für Teams. Sag uns, wer lernt.
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